The high speed switching capabilities of gallium nitride transistors now includes switching transition speeds in the sub nano-second range. These devices are capable of hard switching applications above 10 MHz.
GaN Systems Inc. introduced several gallium nitride power transistors based on its proprietary Island Technology®, which produces highly efficient, smaller transistors at lower cost than traditional silicon MOSFETs and IGBTs....More
Compared with second generation eGaN FETs, the fourth generation exhibits improved characteristics that extends its performance gap over silicon FETs. These new characteristics will then become targets for the next generation of eGaN FETs....More
The high speed switching capabilities of gallium nitride transistors now includes switching transition speeds in the sub nano-second range. These devices are capable of hard switching applications above 10 MHz....More
When a new technology is introduced, it is not reasonable to think that engineers will intuitively know how to effectively and efficiently take advantage of the performance enhancements that the new technology offers – there is always a learning curve. This is being borne out in the case of the rapidly emerging technology of high performance gallium nitride transistors....More
The characteristics of devices fabricated using the recently completed first generation GaNpowIR ® mid-voltage (80 to 250 V) technology platform are presented and compared to those of state-of-the-art silicon based MOSFETs....More
In this eGaN FET-silicon power shoot-out series article, we examine RF performance using the 200 V EPC2012  eGaN FET as a starting point. The eGaN FET is optimized as a power-switching device but also exhibits good RF characteristics. Future eGaN FET parts can be optimized for better RF performance at higher frequencies....More