The high speed switching capabilities of gallium nitride transistors now includes switching transition speeds in the sub nano-second range. These devices are capable of hard switching applications above 10 MHz.
Transphorm has introduced the TPH3207WS GaN field effect transistor (FET) with the lowest on-resistance (41 mW) in a TO-247 package that reduces system volume as much as 50% without sacrificing efficiency....More
Efficient Power Conversion Corporation (EPC) introduces the EPC9059 half-bridge development board for high current, high frequency point-of-load (POL) applications using eGaN ICs to reduce power conversion size....More
Multimegahertz buck converters require higher-frequency operation than silicon power transistors can provide. To meet this need, gallium nitride (GaN) power transistors enable higher efficiency and higher speeds....More