GaN Transistors http://powerelectronics.com/taxonomy/term/11612/more en Unique Driver Architecture Enhances GaN-Based Isolated Power-Supply Designs http://powerelectronics.com/gan-transistors/unique-driver-architecture-enhances-gan-based-isolated-power-supply-designs <div class="field-byline"> CEO Joe Duigan and CTO Dr. Karl Rinne, Heyday Integrated Circuits </div> <div class="node-body article-body"><div></div>GaN-on-silicon E-HEMT transistors are the choice for maximum performance, efficiency and cost-effective power supplies. Cost-effective driver technology enhances supply performance by simplifying layout, reducing component count, and improving reliability. </div> <p><a href="http://powerelectronics.com/gan-transistors/unique-driver-architecture-enhances-gan-based-isolated-power-supply-designs" target="_blank">read more</a></p> http://powerelectronics.com/gan-transistors/unique-driver-architecture-enhances-gan-based-isolated-power-supply-designs#comments Trends & Analysis Robotics GaN Transistors Thu, 22 Sep 2016 14:40:00 +0000 60101 at http://powerelectronics.com <p>(Image courtesy of&nbsp;Heyday Integrated Circuits).</p> Parasitics: A Barrier to Wide Band Gap Adoption in Power Electronics http://powerelectronics.com/power-electronics-systems/parasitics-barrier-wide-band-gap-adoption-power-electronics <div class="field-byline"> Neil Forcier, Keysight Technologies </div> <div class="node-body article-body"><div></div> With WBG devices, limiting parasitics is even more important and the level of parasitics that needs to be considered changes by an order of magnitude.</div> <p><a href="http://powerelectronics.com/power-electronics-systems/parasitics-barrier-wide-band-gap-adoption-power-electronics" target="_blank">read more</a></p> http://powerelectronics.com/power-electronics-systems/parasitics-barrier-wide-band-gap-adoption-power-electronics#comments Trends & Analysis GaN Transistors Power Electronics Systems Thu, 07 Jul 2016 18:05:00 +0000 58671 at http://powerelectronics.com 650V GaN FET with the lowest R(on) in a TO-247 http://powerelectronics.com/discrete-power-semis/650v-gan-fet-lowest-ron-247 <div class="node-body article-body"><div></div>Transphorm has introduced the TPH3207WS GaN field effect transistor (FET) with the lowest on-resistance (41 mW) in a TO-247 package that reduces system volume as much as 50% without sacrificing efficiency.</div> <p><a href="http://powerelectronics.com/discrete-power-semis/650v-gan-fet-lowest-ron-247" target="_blank">read more</a></p> http://powerelectronics.com/discrete-power-semis/650v-gan-fet-lowest-ron-247#comments Products Discrete Power Semis GaN Transistors Tue, 31 May 2016 19:10:00 +0000 57921 at http://powerelectronics.com <p>(Image courtesy of Transphorm).</p> Development Boards Use GaN FETs and High Frequency Synchronous Bootstrap http://powerelectronics.com/discrete-power-semis/development-boards-use-gan-fets-and-high-frequency-synchronous-bootstrap <div class="field-byline"> Efficient Power Conversion </div> <div class="node-body article-body"><div></div>Efficient Power Conversion has introduced the EPC9066, EPC9067, and EPC9068 development boards, which are configurable to a buck converter or as a ZVS class-D amplifier.</div> <p><a href="http://powerelectronics.com/discrete-power-semis/development-boards-use-gan-fets-and-high-frequency-synchronous-bootstrap" target="_blank">read more</a></p> http://powerelectronics.com/discrete-power-semis/development-boards-use-gan-fets-and-high-frequency-synchronous-bootstrap#comments Products Discrete Power Semis GaN Transistors Fri, 20 May 2016 20:55:00 +0000 57581 at http://powerelectronics.com <p>(Image courtesy of EPC).</p> Gallium Nitride Looks to Widen its Footprint in the Global Power Semis Industry http://powerelectronics.com/passive-components/gallium-nitride-looks-widen-its-footprint-global-power-semis-industry <div class="field-byline"> IHS Technology </div> <div class="node-body article-body"><div></div>Wideband gap materials have been commonly used in the semiconductor industry for many years, but market adoption has not reached the levels the industry has been hoping for.</div> <p><a href="http://powerelectronics.com/passive-components/gallium-nitride-looks-widen-its-footprint-global-power-semis-industry" target="_blank">read more</a></p> http://powerelectronics.com/passive-components/gallium-nitride-looks-widen-its-footprint-global-power-semis-industry#comments Automotive Industry Energy Lighting GaN Transistors Passive Components SiC Transistors Fri, 20 May 2016 20:50:00 +0000 57551 at http://powerelectronics.com High Efficiency eGaN FET Development Board for AirFuel Wireless Power Standard http://powerelectronics.com/charger-ics/high-efficiency-egan-fet-development-board-airfuel-wireless-power-standard <div class="node-body article-body"><div></div>Efficient Power Conversion has announced the EPC9065, a development board that can serve as the amplifier stage for AirFuel Alliance Class 4 and Class 5 wireless power transfer applications.</div> <p><a href="http://powerelectronics.com/charger-ics/high-efficiency-egan-fet-development-board-airfuel-wireless-power-standard" target="_blank">read more</a></p> http://powerelectronics.com/charger-ics/high-efficiency-egan-fet-development-board-airfuel-wireless-power-standard#comments Products Charger ICs GaN Transistors Tue, 10 May 2016 21:25:00 +0000 57201 at http://powerelectronics.com <p>(Image courtesy of Efficient Power Conversion).</p> Navitas Semiconductor's First GaN Power ICs Leave Silicon Behind http://powerelectronics.com/discrete-power-semis/navitas-semiconductors-first-gan-power-ics-leave-silicon-behind <div class="node-body article-body"><div></div>Navitas Semiconductor recently announced its first gallium nitride (GaN) Power ICs, using its proprietary AllGaN monolithically-integrated 650V platform.</div> <p><a href="http://powerelectronics.com/discrete-power-semis/navitas-semiconductors-first-gan-power-ics-leave-silicon-behind" target="_blank">read more</a></p> http://powerelectronics.com/discrete-power-semis/navitas-semiconductors-first-gan-power-ics-leave-silicon-behind#comments Products Lighting Mobile Discrete Power Semis GaN Transistors Mon, 21 Mar 2016 19:35:00 +0000 55641 at http://powerelectronics.com The Power 30: Powerelectronics.com’s Top 30 Semiconductor Companies http://powerelectronics.com/companies/power-30-powerelectronicscom-s-top-30-semiconductor-companies <div class="field-byline"> Sam Davis </div> <div class="field-deck"> The editors of powerelectronics.com identified 30 semiconductor companies that have contributed products and technology that have made the industry what it is today. </div> <div class="node-body article-body"><div></div>Many semiconductor companies have made outstanding contributions to power electronics during the past three decades....</div> <p><a href="http://powerelectronics.com/companies/power-30-powerelectronicscom-s-top-30-semiconductor-companies" target="_blank">read more</a></p> http://powerelectronics.com/companies/power-30-powerelectronicscom-s-top-30-semiconductor-companies#comments AC-DC Power Supplies Automotive Defense Industry Energy Charger ICs Lighting Circuit Protection ICs Medical DC-DC Converters Mobile GaN Transistors Portable Power Management Power Electronics Systems Community Companies Archive Thu, 10 Mar 2016 16:28:00 +0000 55491 at http://powerelectronics.com Development Board with 50 A, 1 MHz Capability to Reduce Size in Point-of-Load Applications http://powerelectronics.com/gan-transistors/development-board-50-1-mhz-capability-reduce-size-point-load-applications <div class="node-body article-body"><div></div>Efficient Power Conversion Corporation (EPC) introduces the EPC9059 half-bridge development board for high current, high frequency point-of-load (POL) applications using eGaN ICs to reduce power conversion size. </div> <p><a href="http://powerelectronics.com/gan-transistors/development-board-50-1-mhz-capability-reduce-size-point-load-applications" target="_blank">read more</a></p> http://powerelectronics.com/gan-transistors/development-board-50-1-mhz-capability-reduce-size-point-load-applications#comments Products GaN Transistors Tue, 08 Mar 2016 22:41:00 +0000 55441 at http://powerelectronics.com Development Boards with 200 V eGaN® FETs Enable Operation up to 30 MHz http://powerelectronics.com/gan-transistors/development-boards-200-v-egan-fets-enable-operation-30-mhz <div class="node-body article-body"><div></div>Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors and get their products into volume production quickly</div> <p><a href="http://powerelectronics.com/gan-transistors/development-boards-200-v-egan-fets-enable-operation-30-mhz" target="_blank">read more</a></p> http://powerelectronics.com/gan-transistors/development-boards-200-v-egan-fets-enable-operation-30-mhz#comments Products GaN Transistors Wed, 10 Feb 2016 22:59:00 +0000 54611 at http://powerelectronics.com