Dual-Power MOSFET Shrinks Mounting Area

Aug 13, 2008 10:12 PM

From Renesas Technology America, the RJK0383DPA dual power MOSFET enables smaller, higher-efficiency synchronous-rectification dc-dc converters in communication devices and laptop PCs. It enables higher output current than the company's previous dual MOSFETs (see table below), combining high-side and low-side power MOSFETs and a Schottky barrier diode in a 5.3-mm x 6.2-mm x 0.8-mm max package with high thermal conductivity.

Device type: dual power MOSFET
Voltage rating (V_DSS): 30 V
On-resistance (R_DSON): 12 mΩ typ for high side and 3.7 mΩ typ for low side, both at V_GS = 4.5 V
Drain-Gate Load (Q_GD): 1.5 nC for high side and 6.5 nC for low side, both at V_DD =10 V
Current Rating (I_D max): 15 A on high side MOSFET and 45 A on low-side MOSFET with Schottky diode on chip
Features: In a synchronous-rectification circuit converting a 12-V input to a 1.1-V output at 600 kHz switching frequency, dual MOSFET achieves 91.6% efficiency.
Operating temperature range (T_J): °C to °C
Packaging: 5.3-mm ¡¿6.2-mm ¡¿0.8-mm max WPAK
RoHS compliant? yes.
Target Applications: dc-dc converters in laptop PCs, communication devices and other products
Pricing: $0.89 each in sample quantities
Availability: available Q4 2008
Datasheets posted on web? yes, see http://documentation.renesas.com/eng/products/transistor/rej03g1723_rjk0383dpads.pdf

Table. Comparison of RJK0383DPA with previous-generation devices

Product Name		Item		Max. Rating				On-Resistance, RDS(On) (m¥Ø)								QGD(a) (nC) VDD=10V		Package
				VDSS		ID		VGS = 4.5V				VGS = 10V
								typ.		max.		typ.		max.
RJK0383DPA		High-side MOS		30 V		15 A		12.0		16.8		8.5		11.1		1.5		WPAK (Renesas Technology package code) [5.1 x 6.1mm x 0.8mm, max.] or [5.3 x 6.2 x 0.8 mm, max.]
		Low-side MOS (SBD(b) on-chip)		30 V		45 A		3.7		5.2		2.5		3.3		6.5
RJK0384DPA (Previous generation device)		High-side MOS		30 V		15 A		12.0		16.8		8.5		11.1		1.5
		Low-side MOS (SBD(b) on-chip)		30 V		42 A		4.3		6.0		2.9		3.8		5.2
RJK0389DPA (Previous generation device)		High-side MOS		30 V		15 A		11.8		16.5		8.2		10.7		1.4
		Low-side MOS (SBD(b) on-chip)		30 V		20 A		10.5		14.7		6.8		8.9		2.2

(a) Drain-gate load (Q_GD)
(b) SBD: Schottky barrier diode