Dual PQFN2x2 and Dual PQFN3.3x3.3 Power MOSFETs for Low Power

Aug 16, 2011 9:10 PM

International Rectifier, IR, announced the enhancement of its PQFN offering with the introduction of a PQFN 2mm x 2mm and PQFN 3.3mm x3.3 mm package. The new packages integrate two HEXFET® MOSFETs utilizing IR's latest silicon technology to deliver a high density, cost effective solution for low power applications including smart phones, tablet PCs, camcorders, digital still cameras, DC motors and wireless inductive chargers as well as notebook PC, server and Netcom equipment.

Featuring a pair of power MOSFETs in each package, the new PQFN2x2 and PQFN3.3x3.3 dual devices offer the flexibility of either common drain or half-bridge topologies. Utilizing IR's latest low-voltage silicon technologies (N and P), the devices deliver ultra-low losses. The IRLHS6276, for example, features two MOSFETS each with a typical on-state resistance (RDS(on)) of 33 milliohms in only a 4 mm2 area.
The Dual PQFN family includes P-Channel devices optimized for use in the high-side of load switches, providing a simpler drive solution. Featuring a low profile of less than 1 mm, the devices are compatible with existing Surface Mount Techniques, feature industry-standard footprint and are RoHS compliant.

Pricing for the IRLHS6276 begins at US $0.33 each in 1,000 unit quantities. Production orders are available immediately. Prices are subject to change.

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