Power Electronics

Power MOSFETs

Expanded Portable Power MOSFET Portfolio 
Feb 8, 2012
Alpha and Omega Semiconductor introduced the AON7418, adding to a growing portfolio of power MOSFETs in small, ultra-thin packages. ...

MOSFET Packages Offer Cooler Operation 
Jan 25, 2012
Diodes Incorporated has announced the introduction of its first MOSFETs to be housed in the miniature DFN1212-3 package. ...

Automotive Qualified Lead-free Power MOSFETs 
Jan 25, 2012
Infineon Technologies AG introduced automotive qualified 100 percent lead-free power MOSFETs for TO package types. ...

Power MOSFETs for Portable Applications 
Jan 3, 2012
Alpha and Omega Semiconductor Limited announced power MOSFETs in an ultra-thin (0.8 mm) DFN 3x3 package. ...

P-Channel MOSFET Raises Efficiency 
Jan 3, 2012
The miniature DMP1245UFCL 12V P-channel enhancement mode MOSFET from Diodes Incorporated has been introduced to meet the requirements of designers of space-starved portable products including smartphones and tablet computers....

600 V and 650 V N-Channel Power MOSFETs 
Dec 20, 2011
Vishay Intertechnology, Inc. released a new series of 600 V and 650 V n-channel power MOSFETs with ultra-low maximum on-resistance from 64 mOhm to 190 mOhm at 10 V and with a wide range of current ratings from 22 A to 47 A. ...

MOSFET Solutions for Solar Micro-Inverters 
Nov 11, 2011
Alpha and Omega Semiconductor Limited (AOS) announced new AlphaMOS ( MOS) solutions that are optimized for emerging DC to AC power inverter applications....

40 V to 200 V Family of Automotive-qualified MOSFETs 
Oct 7, 2011
International Rectifier, IR introduced a family of automotive-qualified MOSFETs delivering benchmark on-state resistance (Rds(on)) for a range of applications....

Reducing Size, Complexity Of An Isolated Synchronous Gate Driver 
Sep 27, 2011
The traditional approach to designing an isolated DC to DC converter with synchronous rectification involves using optocouplers or pulse transformers for isolation, and mating them together with a gate driver IC. However, a more integrated approach has higher performance and a much smaller solution size and cost than either the pulse transformer or optocoupler. ...

8 V P-Channel TrenchFET Power MOSFET Offers On-Resistance Down to 34 m§Ù at 4.5 V 
Sep 20, 2011
Vishay Intertechnology, Inc. introduced a new 8 V p-channel TrenchFET¢ç power MOSFET featuring the industry's lowest on-resistance for a p-channel device in the 1.6 mm by 1.6 mm footprint area with a profile under 0.8 mm. ...

Dual PQFN2x2 and Dual PQFN3.3x3.3 Power MOSFETs for Low Power 
Aug 16, 2011
International Rectifier, IR, announced the enhancement of its PQFN offering with the introduction of a PQFN 2mm x 2mm and PQFN 3.3mm x3.3 mm package....

Demystifying Power MOSFET's Avalanche Ruggedness 
Jul 28, 2011
Different power electronics applications stress MOSFETs in completely different ways. For example, there are MOSFETS in which the datasheet parameters provide a picture that is “frozen in time.” That is, they are captured under very specific test conditions that may or may not provide an accurate picture of what to expect from the MOSFET behavior in the circuit....

60V PowerTrench MOSFET 
Jul 13, 2011
Fairchild Semiconductor introduces the FDMS86500L N-Channel, PowerTrench MOSFET. ...

Fully Space-Qualified Power Devices 
Jul 13, 2011
Amid growing world demand for satellite-based communications, television, weather forecasting and geographical data, STMicroelectronics has introduced the first member of a family of power transistors that are fully qualified for use in electronic subsystems on board satellites and launchers....

Current Sensing For Server Power Monitoring: MOSFET Or Shunt? 
Jul 1, 2011
Power monitoring systems require current sensing and are typically adjacent to, associated with, or integrated with hot swap controllers in server systems. Many designers have expressed a desire to utilize MOSFET current sensing based on the premise that it is lossless, and eliminating a perceived large loss in shunts....

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