A Thinner Solution for Generation II XS™ DrMOS Provides Designers Ultrabooks
May 4, 2012
Fairchild Semiconductor's FDMF6708N Generation II XS™ DrMOS family is a fully optimized, compact, integrated MOSFET plus driver power stage solution for high-current, high-frequency, synchronous buck DC-DC applications....
Generation II XS™ DrMOS Provides Designers a Thinner Solution for Ultrabooks
Apr 27, 2012
Fairchild Semiconductor's FDMF6708N Generation II XS™ DrMOS family is a fully optimized, compact, integrated MOSFET plus driver power stage solution for high-current, high-frequency, synchronous buck DC-DC applications....
Compact Vehicle Power Systems
Feb 29, 2012
A highly integrated power control system provides a fully tested vehicle power control system that shortens time-to-market and lowers development costs. The system is offered in low-voltage, high-voltage, and multi-converter versions....
PowIRstage® Improves DRMOS Performance
Feb 14, 2012
International Rectifier announced the extension of its PowIRstage® family of integrated devices with the introduction of the IR3551 that duplicates the functions of existing DRMOS devices, but provides improved performance....
40A PowIRstage Delivers High Current in Smallest Form Factor
Jan 25, 2012
International Rectifier announced the expansion of its PowIRstage(R) family of integrated devices with the introduction of the 40A IR3553, optimized for next-generation servers, consumer and communication systems. ...
DrMOS Devices Offer 94% Efficiency in 6mm x 6mm Form Factor
Jul 19, 2011
High efficiency, high current handling capability and small form factors are critical to power supply designers when selecting components for voltage regulator solutions. ...
IGBT Intelligent Power Modules
Jul 13, 2011
Microsemi Corporation announced a line of intelligent half bridge Insulated Gate Bipolar Transistor (IGBT) standard power modules, including five products that simplify system design and are each available in the company's proprietary low-profile LP8 package....
1200 V/100 A Si IGBT/SiC Diode Copack Cuts Switching Losses
Jul 1, 2011
A recently launched 1200 V IGBT integrates Optimal Punch Through (OPT) Si IGBTs with best-in-class SiC Schottky diodes. These copacks deliver superior switching performance by reducing the overall switching losses by about 28% when compared with the current state-of-the-art Si IGBT modules....
40 A DrMOS Solution
Jun 29, 2011
Vishay Intertechnology, Inc. announced an integrated DrMOS solution providing PWM-optimized high-side and low-side n-channel MOSFETs, a full-featured MOSFET driver IC, and a bootstrap diode, all in a single low-profile, thermally enhanced PowerPAK® MLP 6x6 40-pin package....
High-Efficiency DrMOS Power Module
Aug 11, 2010
Alpha and Omega Semiconductor (AOS) introduced the AOZ5006, a high efficiency 6mm x 6mm power module that is fully compliant with Intel's DrMOS specifications. ...
The J/K Method: A Technique to Select the Optimal MOSFET
Jun 1, 2010
Selecting the correct MOSFET can be a difficult and daunting task for a power supply designer. A process quickly identifies the most suitable MOSFETs that enable a designer to request samples or use extensive modeling on just a few devices....
