MOSFETS with Schottky Diode

Dec 22, 2008 3:30 PM

Vishay Intertechnology, Inc. announced the industry's smallest 20-V n-channel power MOSFET plus Schottky diode. Featuring the 1.6-mm by 1.6-mm thermally enhanced PowerPAK(R) SC-75 package, the SiB800EDK combines a Schottky diode with a low forward voltage of 0.32 V at 100 mA and a MOSFET with on-resistance ratings specified at gate drives down to 1.5 V.

As portable electronics become more compact, the size of components becomes critical. With its ultra-compact footprint, the SiB800EDK is 36 % smaller than devices in 2-mm by 2-mm packages, while offering an ultra-thin 0.75-mm profile. The integration of two components into one package not only saves space, but the inclusion of a trench Schottky keeps the forward voltage low, reducing voltage drop in level shift applications.

The SiB800EDK offers low on-resistance values from 0.960 ohms at 1.5-V VGS to 0.225 ohms at 4.5-V VGS. The low on-resistance rating at 1.5 V allows the MOSFET to be used with signals at low levels.

Typical applications for the new device will include level shift switching in I2C interface and boost converters in portable devices such as cell phones, PDAs, digital cameras, MP3 players, and smart phones.

The SiB800EDK features ESD protection, and is 100 % lead (Pb)-free, halogen-free, and RoHS-compliant, meeting the demands of international legislation for elimination of hazardous substances.

Samples and production quantities of the new SiB800EDK are available now, with lead times of 10 to 12 weeks for larger orders. Pricing for U.S. delivery in 100,000-piece quantities starts at $0.17.

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