Reduced-Footprint MOSFETs Dissipate 3 W

Jan 17, 2007 12:30 PM

Vishay’s eight n-channel power MOSFETs in the PowerPAK ChipFET package offer high thermal performance in a 3-mm x 1.8-mm footprint. Featuring a broad variety of configurations and voltages, the new devices replace many larger power MOSFETs.

As an alternative to the larger SO-8 package, the PowerPAK ChipFET devices deliver higher power density by offering the same 3-W maximum power dissipation with an 81% smaller footprint area and a 48% thinner height profile of 0.8 mm.

These devices can also be used as load switches in portable electronic systems and notebook PCs, delivering a 9% reduction in on-resistance at a 4.5-V gate drive compared with power MOSFETs in the TSOP-6.

Included among the eight devices are single, dual, and single-plus-Schottky-diode power MOSFETs, with breakdown voltage ratings from 20 V to 60 V. Single n-channel power MOSFETs in the PowerPAK ChipFET family are rated for typical thermal resistance values as low as 3°C/W (junction to case), with maximum on-resistance values as low as 0.015 Ω in a 20-V drain-to-source n-channel single-channel device and 0.039 Ω in a dual-channel device. The single-plus-Schottky-diode power MOSFETs feature on-resistance values as low as 0.039 Ω and Schottky diode forward voltage of 0.375 V at 1 A.

All of the these PowerPAK ChipFET devices are pin-compatible with products in the standard ChipFET package. Samples and production quantities of the new PowerPAK ChipFET devices are available now. Pricing in 100,000-piece quantities starts at $0.20.