Power MOSFETs Feature Enhanced Power Dissipation
Apr 25, 2007 10:43 AM
News & Features From Auto Electronics
Committed to improving hybrid electric cars
New Motors for Hybrid Vehicles
Battery Firms Battle for Hybrid Hegemony
Innovative Bipolar Plates for Fuel Cells
See More Headlines
Top Articles
Exploring Current Transformer Applications
Ultracapacitor Technology Powers Electronic Circuits
Buck-Converter Design Demystified
Sensorless Motor Control Simplifies Washer Drives
PET Resources
Buyer's Guide
Conferences
Engineering Jobs
Power Electronics Events
Rent Our Lists
Spotlight on Digital Power
IXYS’ family of 500-V to 1200-V linear power MOSFETs incorporate a cell design that significantly improves ruggedness and power dissipation capabilities. Trench and other planar MOSFET technologies are not recommended for linear operation. However, these Linear MOSFETs are designed to meet requirements for those applications, such as linear power supplies, Class-A amplifiers and electronic loads.
Voltages supported include 500 V, 1000 V and 1200 V, while currents range from 17 A to 62 A. These power MOSFETs are offered in a number of different packages, including the standard TO-247 and a variety of “plus” sizes. The devices are also compatible with IXYS ISOPLUS packages, which provide integral backside case isolation.
The IXTK46N50L (500-V, 46-A, RDS(ON) = 0.18 Ω) and IXTN17N120L (1200-V, 17-A, RDS(ON) = 0.99 Ω) are examples of the family.
