New Discretes, Passives and Modules Shine at APEC
Mar 14, 2007 2:27 PM
By Mark Valentine, Technical Editor, Power Electronics Technology
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At APEC2007, several vendors displayed their latest offerings of passive components, discrete power semiconductors, and various dc-dc converter modules. These products reveal the innovation that continues in the mature industry of power electronics. They also reveal a focus on improved efficiency and power management shaped by international energy-usage regulations.
Vishay Intertechnology displayed three n-channel power MOSFETs for OR-ing applications. They feature 20-V drain-to-source and gate-to-source voltage ratings. These devices use TrenchFET Gen II technology. The Si4398DY delivers an RDS(ON) rating of 2.8 mΩ at 10 V. With a maximum RDS(ON) rating of 2.4 mΩ at 10 V, the Si7866ADP combines low conduction losses with robust thermal performance. The previously released SiE808DF maximum RDS(ON) rating is 1.5 mΩ at 10 V.
Another vendor, Toshiba, introduced its own high-speed switching MOSFETs using the UMOS-V process. This process improves many of the key parameters required for better power efficiency in both the high- and low-side MOSFETs in a synchronous dc-dc converter. The lineup includes eleven initial members rated for 30 V, with RDS(ON) values ranging from 3.1 mΩ to 11 mΩ. Additional UMOS-V MOSFETs are planned with higher voltage ratings, as well as p-channel, dual-channel and MOSBD (a MOSFET with a Schottky barrier diode).
Also suitable for dc-dc converters is a series of optical isolators that was introduced at APEC. The OPI1270, OPI1280 and OPI1290 from Optek consist of a visible red LED with phototransistor or Photologic sensor, and transfer data through a plastic flexible cable. This allows each end of the isolator to be mounted at different locations within the system. The isolators feature an isolation voltage of more than 20 kV with 0.05-in. (1.27-mm) lead spacing. The power dissipation rating is 100 mW.
