Power Electronics
  

Bipolar Transistors

New Generation Of Highly Efficient Low VCEsat Transistors 
Apr 28, 2010
NXP Semiconductors announced the launch of the first eight products from its new 4th generation low VCEsat (BISS) transistors...

Accurately Test Magnetics Carrying DC Bias Current 
Sep 1, 2006
A new method of injecting dc current into power inductors enables designers to avoid common pitfalls when measuring these devices, thus minimizing measurement errors....

Discrete Components Enable Bold PoE Solutions 
Jun 1, 2006
Thanks to IEEE 802.3af, Ethernet data transmission lines may now conduct a specified amount of power. Enabling PoE brings a variety of advantages and...

High-Side Current Amplifier Forms 28-V Circuit Breaker 
Jun 1, 2006
The latching-comparator output (COUT1) on the MAX4373, a high-side current amplifier with comparator and voltage reference, makes possible a circuit-breaker...

Advances in Discrete Semiconductors March On 
Sep 1, 2005
The past three decades have heralded the introduction of MOSFETs, IGBTs, silicon, Schottky and silicon-carbide Schottky diodes, as well as continuing advances in high-voltage rectifiers....

Eric Lidow: Lifetime Achievement Award Recipient 
Sep 1, 2004
To list the highlights of Eric Lidow's career in power electronics is to chronicle many of this industry's milestones dating back to the introduction...

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Discrete Semiconductor News

Texas Instruments Acquires CICLON Semiconductor

China's Semiconductor Market to Fall 5.8 Percent in 2009

High-Voltage Power MOSFETs Use Advanced Process Technology
 
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