Power Electronics

Discrete Semiconductors

600V GenX3 XPT IGBTs Exhibit Improved Operating Characteristics

Apr 30, 2012 5:19 PM Abdus Sattar

GenX3 IGBTs reduce power losses, improve efficiency, reduce system heat sink size, and increase the current density in a board assembly. They suit applications requiring both high efficiency and ruggedness....

Miniature High-Speed Switching Diodes Reduce PCB Size

Diodes Incorporated has introduced a family of high-speed switching diodes in a choice of small footprint, low-profile packages, enabling significant reductions in component count and PCB area....

Bipolar Transistors

New Generation Of Highly Efficient Low VCEsat Transistors

NXP Semiconductors announced the launch of the first eight products from its new 4th generation low VCEsat (BISS) transistors...

Accurately Test Magnetics Carrying DC Bias Current

A new method of injecting dc current into power inductors enables designers to avoid common pitfalls when measuring these devices, thus minimizing measurement errors....

IGBTs

600V GenX3 XPT IGBTs Exhibit Improved Operating Characteristics

GenX3 IGBTs reduce power losses, improve efficiency, reduce system heat sink size, and increase the current density in a board assembly. They suit applications requiring both high efficiency and ruggedness....

Protect IGBTs By Sensing Current Using Optical Isolation Amplifiers

Isolation amplifiers provide an effective method to protect IGBTs against over-current, overload and overvoltage conditions in addition to their current/voltage sensing function. Using these devices together with feature-rich gate drivers, you can implement a cost-effective yet full IGBT protection scheme....

Power Modules

A Thinner Solution for Generation II XS™ DrMOS Provides Designers Ultrabooks

Fairchild Semiconductor's FDMF6708N Generation II XS™ DrMOS family is a fully optimized, compact, integrated MOSFET plus driver power stage solution for high-current, high-frequency, synchronous buck DC-DC applications....

Generation II XS™ DrMOS Provides Designers a Thinner Solution for Ultrabooks

Fairchild Semiconductor's FDMF6708N Generation II XS™ DrMOS family is a fully optimized, compact, integrated MOSFET plus driver power stage solution for high-current, high-frequency, synchronous buck DC-DC applications....

Power MOSFETs

30 V P-Channel Chipscale MOSFETs

Vishay Intertechnology, Inc. expanded its MICRO FOOT® TrenchFET® Gen III power MOSFET family with two p-channel 30 V devices that set new benchmarks for size and on-resistance....

Power MOSFETs for Battery or Load Switching

Fairchild Semiconductor provides designers of cellular handsets and other ultra-portable applications P-Channel PowerTrench® MOSFETs to meet their needs for a small sized battery or load switching solution with excellent thermal characteristics. ...

Rectifiers/Diodes

MicroDIP Bridge Rectifiers

Fairchild Semiconductor (MDBxS series of MicroDIP Bridge Rectifiers have one of the lowest package height, 1A bridge rectifiers available....

Diodes housed in Ultra-Miniature Packages

Diodes Incorporated has announced its first products to be housed in the ultra-miniature X3-DFN0603-2 package....

Thyristors

More Growth and Specialization Loom Ahead for Power Semiconductors

Over the next five years, the power semiconductor market will continue to experience steady growth, with no disruptive device technologies impacting the...

Enhance Triac Reliability Through Thermal Design

Appliance applications illustrate how to perform the necessary thermal calculations using datasheet information supplied by the semiconductor vendor....

Discrete Semiconductor News

Texas Instruments Acquires CICLON Semiconductor

Texas Instruments Incorporated (TI) acquired Bethlehem, PA-based CICLON Semiconductor Device Corporation, a leading designer of high-frequency, high-efficiency power management semiconductors...

China's Semiconductor Market to Fall 5.8 Percent in 2009

China's semiconductor industry is expected to contract in 2009, the first time a significant decline has occurred since iSuppli Corp. began gathering statistics on the market-and perhaps for the first time in the history of the nation's chip business...

High-Voltage Power MOSFETs Use Advanced Process Technology

Toshiba America Electronic Components, Inc. (TAEC) introduced a new series of high-voltage pi-MOS VII MOSFETs that combine advanced process technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings...

TrenchFET(R) Power MOSFET in MICRO FOOT(R) Chipscale Package

Vishay Intertechnology, Inc. released the industry's first TrenchFET power MOSFET in the chipscale MICRO FOOT(R) package to feature backside insulation...


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May 1, 2012
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Discrete Semiconductor News

Texas Instruments Acquires CICLON Semiconductor

China's Semiconductor Market to Fall 5.8 Percent in 2009

High-Voltage Power MOSFETs Use Advanced Process Technology

 
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Topic Index

Discrete Semis
Bipolar Transistors
IGBTs
Power Modules
Power MOSFETs
Rectifiers/Diodes
Thyristors

Power Management
Digital Power Control
High-Voltage Devices
LED Drivers
Lighting Power Management
Motor Power Management
Power ICs
PWM Controllers
Regulator ICs

Portable Power Management
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Battery Charger ICs
Fuel Gauges Controllers and Regulators
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Passives/Packaging
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Circuit Protection Devices
Connectors
Magnetics
Packaging
Printed Circuit Boards
Resistors
Sensors & Transducers
Switches & Electromagnetic Relays

Topic Pages
Wind Power
Flyback Transformers

Thermal Management
Fans
Heatpipes & Spreaders
Heatsinks
Liquid Cooling
Thermal Interface Materials
Thermal Management Simulation

Power Systems
DC-DC Converters
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EMI & EMC
Linear Power Supplies
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Switch-Mode Power Supplies
Test & Measurement Uninterruptible Power Supplies

Digital Power
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