Siliconix’s new 300-million-cells-per-square-inch Gen II process offers a specific on-resistance of 12mΩ/mm², a 30% improvement over previous-generation silicon. According to the manufacturer, the new TrenchFET Gen II will enable the company to build power MOSFETs that will break the 4mΩ barrier in the SO-8 footprint. In addition to its higher cell density, TrenchFET Gen II uses a new stripe topology that reduces mask count by 28%, optimizing turnaround and reducing costs.

The first products built on the new technology are the 30V n-channel MOSFETs. While Si4320DY will come in LITTLE FOOT SO-8, Si7356DP will be offered in PowerPAK SO-8. Both are designed to serve as high-performing, cost-effective solutions for low-side operation in synchronous buck dc-dc converters used in notebook computers, and for secondary synchronous rectification in fixed telecom applications. Their record-breaking on-resistance specifications are 4mΩ at 4.5V and 3mΩ at 10V. A high threshold voltage and low Qgd/Qgs ratio of 0.8 offer substantial shoot-through protection and add to efficiency by providing a good margin for noise and voltage spikes.

Designed for higher efficiency in power supply circuits, these MOSFETs will further cut power consumption to extend battery life in end systems. A typical application circuit test on a dual-phase evaluation board demonstrates a gain of nearly 1% in efficiency and a reduction of device temperature by 7°C.

Samples and production quantities of the Si4320DY and Si7356DP are available now with lead times of four to six weeks for larger orders. Pricing in 100,000-piece quantities starts at $0.58.

For more information, visit www.vishay.com.

Want to use this article? Click here for options!
© 2007 Penton Media, Inc.