New Trench Technology

Feb 25, 2003 12:00 PM, Edited by PE Tech Staff

ON Semiconductor has announced a unique trench process technology that, on average, delivers a 40% improvement in on-resistance when compared to other available trench processes.

Before the end of the year, the company plans to introduce a complete portfolio of P-channel and N-channel MOSFETs that are based on this innovative trench technology. Focus applications of the initial devices--to be launched this quarter--will be load management, circuit charging, battery protection, and dc-dc conversion in portable and wireless products. High-performance trench-based devices for computing and automotive applications will follow.

ON Semiconductor’s unique trench technology realizes the highest channel density in the industry, delivering the best-in-class on-resistance (Rds(on)) performance for a given package footprint. For example, the 8-V P-channel and 20-V P-channel products to be offered by ON Semiconductor in a ChipFET package (1.8 mm x 3.3 mm) demonstrate an on-resistance of 19 mOhms and 21 mOhms, respectively. On average, these values at a gate voltage of 4.5 V reflect a 40% improvement as compared to currently available products in packages with the same footprint. This same proportional improvement in on-resistance is also anticipated in the Micro-8LL (3.3 mm x 3.3 mm), TSOP-6 (3 mm x 3 mm), and SC-88 (2 mm x 2 mm) packaged MOSFETs ON Semiconductor will be offering.

General sampling of ON Semiconductor’s initial trench MOSFET devices will begin in March.

For more information, visit www.onsemi.com.