Super Junction Lowers R_DS(ON) of High-Voltage MOSFETs

Apr 13, 2005 5:28 PM

The DTMOS family of power MOSFETs from Toshiba America Electronic Components employs a new super junction structure that lowers on-resistance (R_DS(ON)) to approximately 40% of the value typically achieved with conventional MOSFETs. The first device in the DTMOS family, TK15A60S, is targeted for use in power supplies in TV sets, home appliances, ad adapters and ballast lighting.

The super junction structure has vertical paths to allow electrical current to flow through easily on a silicon substrate, realizes lower R_DS(ON) than the theoretical limit of silicon. By applying this super junction structure and optimizing the total device, the R_DS(ON) for the same area in Toshiba's DTMOS device achieves a 60% reduction and its gate charge (Qg ) achieves a 40% reduction compared with Toshiba's conventional MOSFETs. Consequently, the RDSON* Qg figure-of-merit is one-fourth the value of the company's conventional MOSFETs.

With this announcement, Toshiba is combining a super junction structure with the company's original Deep Trench MOSFET (DTMOS) technology. The TK15A60S, specifies maximum ratings of 600 V for drain-source voltage, ±30 V for gate-source voltage, and 15 A for drain current. Other specifications include a gate threshold voltage of 3 V to 5 V, an on-resistance of 0.3 Ω maximum, and a typical gate charge of 27 nC. The device is housed in a TO-220SIS package. Available now, the TK15A60S is priced at $2.90 each.

For more information, visit www.toshiba.com.

Acceptable Use Policy blog comments powered by Disqus