The Total GaN family of GaN (Gallium Nitride) on silicon transistors and diodes from Transphorm Inc. is reportedly the world's first JEDEC-qualified 600 V GaN device platform. 

Based on Transphorm's patented, high-performance EZ-GaN technology, the TPH3006PS GaN high electron mobility transistor (HEMT) combines low switching and conduction losses to reduce energy loss by 50 percent compared to conventional silicon-based power conversion designs. The TO-220-packaged GaN transistor features low on-state resistance RDS(on) of 150 milliohms, low reverse-recovery charge (Qrr) of 54 nanocoulombs (nC) and high-frequency switching capability all of which result in more compact, lower cost systems. Also available in industry-standard TO-220 packages, the TPS3410PK and TPS3411PK GaN diodes offer 6 A and 4 A operating currents, respectively, with a forward voltage (Vf) of 1.3 Volts. In addition, three application kits â€" PFC (TDPS400E1A7), Daughter Board (TDPS500E0A) and Motor Drive (TDMC4000E0I) are available for rapidly benchmarking the in-circuit performance of Transphorm's products.

Transphorm's proprietary EZ- GaN platform can reduce power system size, increase energy density and deliver high efficiencies across the grid. For manufacturers looking for a low-risk roadmap to the next generation of power conversion technology, EZ-GaN provides a cost-effective, customizable and easy-to-use solution ready for commercial scale.

For approved customers, the TPH3006PS HEMT device is available for sale at a price of $5.89 each in 1,000 quantities. The TPS3410PK and TPS3411PK diodes are priced at $2.06 and $1.38, respectively, also in 1,000-piece quantities.