What is in this article?:
- GaN Basics: FAQs
- What is the primary advantage of GaN over silicon power transistors?
- How does a GaN’s Gate threshold voltage function?
- What are the important enhanced GaN FET driving Requirements?
- What is most critical about using GaN devices?
Gallium nitride transistors have emerged as a high-performance alternative to silicon-based transistors, thanks to the technology's ability to be made allow smaller device sizes for a given on-resistance and breakdown voltage than silicon.
What is most critical about using GaN devices?
The layout is most critical regardless if the device is e-mode, d-mode or cascode configuration. All of these devices switch extremely fast and therefore the parasitic inductance of the layout must be as small as possible, in the range of 0.4 nH to 2.0 nH is desirable.
What are the projections for future GaN products?
Fig. 4 is EPC’s projection of the future of GaN devices. When originally introduced in 2010, devices were rated at 40 to 200 V and 500 Mhz switching speed. Recent introductions by EPC raised the speed up to 3 GHz for devices rated at 40 V, 65 V and 100 V and on-resistance ranging from 125 mΩ to 530 mΩ. The company also expects GaN transistors to eventually operate at 600 V and it expects more functions per chip.
Fig. 4 - The future of GaN transistors indicates the development of faster and higher voltage devices.