Why SiC Devices?

Silicon Carbide (SiC) MOSFETs exhibit higher blocking voltage, lower on state resistance and higher thermal conductivity than their silicon counterparts. SiC MOSFETs are designed and essentially processed the same way as silicon MOSFETs.  The enhanced performance is derived from the material advantages inherent in the silicon carbide physics.  Due to its simple structure, ease of a design-in, and low drive losses, the N-channel enhancement mode SiC MOSFET offers good compatibility as a replacement for silicon MOSFETs and IGBTs.

What nomenclature do SiC devices employ? 
SiC transistors borrowed the same nomenclature as their silicon brethren: gate, drain and source, as shown in Fig. 1. In addition, on-resistance and breakdown voltage of a SiC device have a similar meaning as their silicon counterparts. On-resistance (RDS(ON)) vs. gate-source voltage curves are similar to silicon MOSFETs. The temperature coefficient of SiC MOSFET on-resistance is similar to the silicon MOSFET as it is positive, but the magnitude of RDSon change is less over the device operating range.

Fig. 1 - The schematic diagram of an enhancement mode SiC MOSFET is similar to that of a silicon MOSFET, having a gate, drain, and source.