Would you like advice from an expert to help with a project, design problem, or help navigating your career? You can now get your questions answered by Power Electronics’ featured industry experts.
Power Electronics' Q&A series kicks off this month featuring Alex Lidow, CEO of Efficient Power Conversion Corporation (EPC) as the first expert to field your questions.
Send us your question for Alex one of two ways: 1) use the form at the bottom of this page if you wish to post anonymously; or 2) simply post a comment in the “Discuss this Article” box below. Power Electronics will publish answers in the reader Q&A next week, so check back then! Alex’s Q&A will also appear in the PE Tech weekly newsletter, so if you’re not already a subscriber, click here to get your free subscription now.
How it works: during a two week period we will collect your power industry related questions for the month's featured expert and they will *answer as many questions as possible. Responses will be published online and linked in the PE Tech newsletter.
| Who is Alex Lidow? |
Prior to founding EPC, Dr. Lidow was CEO of International Rectifier Corporation. A co-inventor of the HEXFET power MOSFET, Dr. Lidow holds many patents in power semiconductor technology and has authored numerous publications on related subjects. Lidow earned his Bachelor of Science degree from Caltech in 1975 and his Ph.D. from Stanford in 1977.
Q. How do GaN transistors compare with power MOSFETs for power switching applications in terms of efficiency?
Alex Lidow - To effectively compare the potential performance of a power MOSFET and an enhancement mode GaN transistor in a power conversion circuit, some figures of merit (FOM) need to be defined first.