Synchronous Rectifier Module Eyes Isolated Supplies
Jul 1, 2003 12:00 PM
By Ashok Bindra, Editor, Power Electronics Technology
News & Features From Auto Electronics
Committed to improving hybrid electric cars
New Motors for Hybrid Vehicles
Battery Firms Battle for Hybrid Hegemony
Innovative Bipolar Plates for Fuel Cells
See More Headlines
Top Articles
Exploring Current Transformer Applications
Ultracapacitor Technology Powers Electronic Circuits
Buck-Converter Design Demystified
Sensorless Motor Control Simplifies Washer Drives
PET Resources
Buyer's Guide
Conferences
Engineering Jobs
Power Electronics Events
Rent Our Lists
Spotlight on Digital Power
To gain a few more points in conversion efficiency, power supply designers have been exploiting the benefits of synchronous rectification (SR) for some time now. Primarily, the focus has been on nonisolated dc-dc converters employed in distributed power architectures or on high performance voltage regulator modules (VRMs) — where every bit counts, and the volumes are high. Well, it's time this proven technique is extended to the isolated front, thereby helping designers take full advantage of SR techniques.
Semiconductor player Microsemi has taken that step. In collaboration with Seattle, Wash.-based SRMOS Inc., Microsemi's Colorado Division has developed an SR module for the secondary side of the isolation transformer. Demonstrated at this year's APEC 2003, designers had focused on many issues in developing this module, some of which include matching MOSFETs to driver ICs, alleviating MOSFET body diode losses — especially above 300 kHz — eliminating problems due to cross conduction, ensuring high performance during rapid load changes, easing complex timing and signal coupling problems with nonself-driven approaches, and handling light load or discontinuous current operation adequately.
This compact surface-mount module, SRM4010, comprises two power MOSFETs that function as low loss rectifiers (Fig.1). Driven by dedicated ICs that provide effective gate drive for these ultralow R
To prevent cross conduction and minimize MOSFET body diode conduction, the SRM4010 uses a patented predictive timing plus control scheme. This intelligent prediction in the control circuit permits the module to handle sudden changes in pulse widths without cross conduction. As a result, it adapts quickly to continuous and discontinuous load current conditions, allowing the module to operate under any condition such as current mode and voltage mode control. Predictive timing plus offers automatic adjustment to discontinuous current condition, fault protection, and automatic current sharing. Also, the on-board driver and the power MOSFETs are optimized to keep the gate drive losses to a minimum. Thus, the module offers high gate drive current capability, which lends itself to driving 40A-plus MOSFETs at 400 kHz.
The SR4010 comes in a 0.8 in. × 0.8 in. × 0.28 in. current isolated surface-mount package featuring low thermal resistance of 3.5°C/W and ultralow inductance/resistance connections. Designed for high regulation and low noise, this robust package includes a copper baseplate for effective heat distribution (Fig. 2, on page 58). Because the isolated baseplate can be directly mounted on printed circuit boards (PCBs), the SR module provides high thermal efficiency to handle more power dissipation.
The SRM4010 is the first in a family of high efficiency SR modules for low-voltage isolated power supplies with 48V input. Internal tests conducted on the SRM4010 in a forward converter topology with 3.3V output shows that the SR module can achieve 95% and higher efficiency for output currents over 40A at switching frequencies in the 250 kHz to 400 kHz (Fig.3) range. Presently, this part is being ramped up for production. Demo boards are readied for those who prefer to evaluate the part before taking it to production. While the maker has plans to expand this family, higher voltage models capable of delivering 12V, 24V, and 28V outputs at wider current ranges are also in the works.
More Choices for Ultra-Low RDS(ON) MOSFETs
Independently, power MOSFET suppliers continue to innovate on the power MOSFET front to further wring every ounce out of discrete devices so as to satisfy the ongoing efficiency demands of the dc-dc converters. Lately, Philips Semiconductor, Silicon Semiconductor, and Vishay Siliconix have all announced ultralow on-resistance parts with reduced gate-drain capacitance to enable efficient switching at higher frequencies. While Philips and Vishay Siliconix are banking on improved Trench processes, nascent Silicon Semiconductor has developed a rugged planar process to boost the performance of 30V MOSFETs. Using its patented planar process, Silicon Semiconductor has released ultralow R
On the trench side, Vishay Siliconix has exploited its innovative trench technology, called WFET, to offer record-breaking figure of merit performance. According to Vishay Siliconix, the newest members derived from its WFET technology achieve unprecedented R
Microsemi, Colorado Division, Broomfield, Colo.; www.microsemi.com
CIRCLE 345 on Reader Service Card
Philips Semiconductors, San Jose, Calif.; www.philips.com
CIRCLE 346 on Reader Service Card
Silicon Semiconductor, Research Trianlge Park, N.C.; www.siliconsemi.com
CIRCLE 347 on Reader Service Card
Vishay Siliconix, Santa Clara, Calif., www.vishay.com
CIRCLE 348 on Reader Service Card
Acceptable Use Policy blog comments powered by Disqus

